MXP120A MaxSiC™ 1200V N-Channel MOSFETs

Vishay Semiconductors MXP120A MaxSiC™ 1200V N-Channel MOSFETs feature 1200V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 56W to 268W (Tc=25°C) and continuous drain current of 10.5A to 52A (Tc=25°C). The MXP120A MaxSiC™ 1200V N-Channel MOSFETs are halogen-free and are available in TO-247 3L, TO-247 4L, and TO-263 7L packages. These MOSFETs are used in chargers, auxiliary motor drives, and DC-DC converters.

Resultados: 16
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Qtde RoHS Modelo ECAD Estilo de montagem
Caixa / Gabinete
Polaridade do transistor
Número de canais
Vds - Tensão de ruptura entre drenagem e fonte
Id - Corrente de drenagem contínua
Rds On - Fonte de drenagem na resistência
Vgs - Voltagem de porta e fonte
Tensão de limite porta e fonte
Qg - Carga na porta
Temperatura operacional mínima
Temperatura operacional máxima
Pd - Dissipação de potência
Modo de canal
Nome comercial
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL (SIC) MOSFET
Ficha técnica
2 313Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 29 A 100 mOhms - 10 V, + 22 V 2.69 V 47.3 nC - 55 C + 150 C 139 W Enhancement MaxSIC
Vishay Semiconductors MXP120A045SE-T1GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
800Esperado 25/06/2026
Mín.: 1
Mult.: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors MXP120A045SL-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 18/06/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors MXP120A045SW-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 18/06/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-3 N-Channel 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 84 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors MXP120A063SE-T1GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
800Esperado 16/09/2026
Mín.: 1
Mult.: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 41 A 79 mOhms - 10 V, 22 V 2.9 V 58 nC - 55 C + 175 C 221 W Enhancement
Vishay Semiconductors MXP120A063SL-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 16/09/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors MXP120A080SE-T1GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
800Esperado 16/09/2026
Mín.: 1
Mult.: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 32 A 100 mOhms - 10 V, 22 V 2.9 V 47 nC - 55 C + 175 C 185 W Enhancement
Vishay Semiconductors MXP120A080SL-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 16/09/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 31 A 100 mOhms - 10 V, 22 V 2.9 V 45 nC - 55 C + 175 C 174 W Enhancement
Vishay Semiconductors MXPQ120A045SE-1GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
800Esperado 03/07/2026
Mín.: 1
Mult.: 1
SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 52 A 56 mOhms - 10 V, 22 V 2.8 V 82 nC - 55 C + 175 C 268 W Enhancement
Vishay Semiconductors MXPQ120A045SW-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 06/07/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 51 A 56 mOhms - 10 V, 22 V 2.8 V 83 nC - 55 C + 175 C 254 W Enhancement
Vishay Semiconductors MXPQ120A063SL-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 21/09/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors MXPQ120A080SL-GE3
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
600Esperado 17/09/2026
Mín.: 1
Mult.: 1
Through Hole TO-247AD-4 N-Channel 1 Channel 1.2 kV 39 A 79 mOhms - 10 V, 22 V 2.9 V 61 nC - 55 C + 175 C 205 W Enhancement
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
Tempo de conclusão sem o estoque 57 semanas
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, + 22 V 2.38 V 75.6 nC - 55 C + 150 C 227 W Enhancement MaxSIC
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
Tempo de conclusão sem o estoque 57 semanas
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, + 22 V 2.38 V 75.6 nC - 55 C + 150 C 227 W Enhancement MaxSIC
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
Tempo de conclusão sem o estoque 57 semanas
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 10.5 A 313 mOhms - 10 V, + 22 V 3.1 V 20.3 nC - 55 C + 150 C 56 W Enhancement MaxSIC
Vishay Semiconductors MOSFETs de SiC 1200-V N-CHANNEL SIC MOSFET
Ficha técnica
Não estocado
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 10.5 A 313 mOhms - 10 V, + 22 V 3.1 V 20.3 nC - 55 C + 150 C 56 W Enhancement MaxSIC