ROHM Semiconductor GNP1 EcoGaN™ 650V E-mode Gallium-Nitride (GaN) FETs utilize low ON resistance and high-speed switching for power conversion efficiency and size reduction. The highly reliable GNP1 FETs provide built-in ESD protection and excellent heat dissipation, facilitating mounting. Applications include high switching frequency and high-density converters.
650V E-mode GaN FETs
Low ON resistance
Built-in ESD protection
Contributes to power conversion efficiency and size reduction