1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Resultados: 20
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Qtde RoHS Modelo ECAD Tecnologia
Caixa / Gabinete
Estilo de montagem
Configuração
Coletor - VCEO máx. de voltagem do emissor
Tensão de saturação do coletor - emissor
Tensão do emissor do gate máxima
Corrente contínua do coletor a 25ºC
Pd - Dissipação de potência
Temperatura operacional mínima
Temperatura operacional máxima
Série
Embalagem
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Ficha técnica
434Em estoque
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Ficha técnica
2 258Em estoque
Mín.: 1
Mult.: 1

Si TO-220FP-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 24 W - 55 C + 175 C STGF5H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Ficha técnica
4 906Em estoque
Mín.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGP5H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Ficha técnica
502Em estoque
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube


STMicroelectronics IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac
Ficha técnica
594Em estoque
Mín.: 1
Mult.: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 357 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
Ficha técnica
416Em estoque
Mín.: 1
Mult.: 1

Si Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Ficha técnica
23Em estoque
1 200Esperado 04/09/2026
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Ficha técnica
579Em estoque
1 800Esperado 04/09/2026
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube


STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Ficha técnica
600Em estoque
Mín.: 1
Mult.: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
Ficha técnica
811Em estoque
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
Ficha técnica
294Em estoque
600Esperado 24/08/2026
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Ficha técnica
10 000No pedido
MouseReel disponível
Mín.: 1
Mult.: 1
: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Ficha técnica
3 115No pedido
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Ficha técnica
984No pedido
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
Ficha técnica
493Em estoque
Mín.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 7 A high speed
Ficha técnica
Tempo de conclusão 20 semanas
Mín.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Ficha técnica
Tempo de conclusão sem o estoque 22 semanas
Mín.: 1
Mult.: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Ficha técnica
Tempo de conclusão sem o estoque 22 semanas
Mín.: 600
Mult.: 600

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Ficha técnica
Tempo de conclusão sem o estoque 15 semanas
Mín.: 2 000
Mult.: 1 000
: 1 000

Si D2PAK-3 SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGB5H60DF Reel
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 lo
Ficha técnica
Tempo de conclusão sem o estoque 22 semanas
Mín.: 600
Mult.: 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube