Toshiba DTMOSIV MOSFETs

Resultados: 112
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (EUR) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Tecnologia Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal Nome comercial Embalagem
Toshiba MOSFETs Power MOSFET N-Channel 2 567Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 20 A 156 mOhms - 30 V, 30 V 3 V 55 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Power MOSFET N-Channel 7 464Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC 5 745Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 820 mOhms - 30 V, 30 V 2.7 V 12 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W 2 476Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ 991Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Power MOSFET N-Channel 1 657Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFETs MOSFET NChannel 068ohm DTMOS 20Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NCh trr100 nsn 0.25ohm DTMOS 47Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 4.5 V 40 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFETs Power MOSFET N-Channel 34Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel 192Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 551Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 950 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 9.7A 80W FET 600V 700pF 20nC 449Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ 1 788Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7.8 A 670 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN 8?8-OS PD=139W F=1MHZ 2 495Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC 757Em estoque
Mín.: 1
Mult.: 1
Bobina: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11.5 A 340 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 100 W DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFETs Power MOSFET N-Channel 4 415Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 62 mOhms - 30 V, 30 V 3 V 135 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF 74Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-3PL-3 N-Channel 1 Channel 600 V 100 A 15 mOhms - 30 V, 30 V 3.7 V 360 nC - 55 C + 150 C 797 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel 1 288Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch DTMOSIV 600V 240W 3000pF 30.8A 1 587Em estoque
2 250Esperado 10/02/2026
Mín.: 1
Mult.: 1
Bobina: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 87 mOhms - 30 V, 30 V 3 V 105 nC + 150 C 240 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFETs Power MOSFET N-Channel 257Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 350 mOhms - 30 V, 30 V 3 V 25 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC 79Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 800V 1150pF 19nC 9.5A 40W 188Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 460 mOhms - 20 V, 20 V 3 V 19 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC 61Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A 150Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChannel 0.33ohm DTMOS 53Em estoque
250Esperado 17/04/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms - 30 V, 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube