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Infineon Technologies S29GL01GT/512GT MIRRORBIT™ Eclipse™ Flash Memory

Infineon Technologies S29GL01GT / S29GL512GT MIRRORBIT™ Eclipse™ Flash Memory offers a page access time as fast as 15ns with a corresponding random access time as quick as 100ns. These devices feature a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This feature results in faster effective programming time than standard programming algorithms. The Infineon Technologies S29GL01GT / S29GL512GT is ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.

Features

  • 45nm MIRRORBIT Eclipse technology
  • Single supply (VCC) for read/program/erase (2.7V to 3.6V)
  • Wide I/O voltage range (VIO): 1.65V to VCC
  • x8/x16 data bus
  • Asynchronous 32-byte page read
  • Programming in page multiples, up to a maximum of 512-bytes
  • Single word and multiple programs on the same word options
  • Sector erase in uniform 128kB sectors
  • Suspend and resume commands for program and erase operations
  • Advanced sector protection
  • Status register, data polling, and ready/busy pin methods to determine device status
  • Separate 2048-byte one-time program array
  • Temperature range: (-40°C to +85°C)
  • Package options:
    • 56-pin TSOP
    • 64-ball Ball Grid Array, 13mm x 11mm
  • Density options:
    • 512MB
    • 1GB

Applications

  • Automotive instrument clusters
  • Automotive infotainment systems
  • Hand-held displays
  • Digital cameras
  • Projectors
  • Medical diagnostic equipment
  • Factory automation
  • Home automation appliances

Additional Resource

Published: 2016-06-28 | Updated: 2023-04-25