Transphorm Gen IV SuperGaN® FETs
Transphorm Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Transphorm Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.
Features
- JEDEC-qualified GaN technology
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Low QRR
- Reduced crossover loss
- Easy to drive with commonly used gate drivers
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall, lower system cost
- Achieves increased efficiency in both hard and soft-switched circuits
- GSD pin layout improves high-speed design
Applications
- Datacom
- Broad industrial
- PV inverters
- Servo motors
- Computing
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- Automotive
Videos
Additional Resources
- Press Release
- Printed Circuit Board Layout and Probing for GaN FETs
- Recommended External Circuitry for Transphorm GaN FETs
- GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
- Characteristics of Transphorm GaN Power FETs
- Designing Hard-switched Bridges with GaN
- VGS Transient Tolerance of Transphorm GaN FETs
- Drain Voltage and Avalanche Ratings for GaN FETs
- GaN Powers World’s First Integrated Microinverter PV Systems
- 650V SuperGaN® GaN FET in TO-220 (source tab)
- 650V SuperGaN® GaN FET in PQFN (source tab)
Featured SuperGaN FETs
Transphorm TP65H035G4YS 650V SuperGaN® FET
Normally off device, 35mΩ resistance, 4-lead TO-247 package (TO-247-4L), and uses Gen IV platform.
Transphorm TP65H150BG4JSG 650V SuperGaN® GaN FET
650V, 150mΩ normally-off device offering superior quality and performance.
Transphorm TP65H070G4PS 650V SuperGaN® GaN FET
A 650V, 70mΩ normally-off device offering superior quality and performance.
Transphorm TP65H070G4LSGB 650V SuperGaN® GaN FET
650V, 70mΩ normally-off device offering superior quality and performance.
Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET
480mΩ Gallium Nitride (GaN) normally-off device available in 5x6 PQFN package.
Transphorm TP65H035G4WSQA 650V SuperGaN® FET
Normally-off device using Transphorm's Gen IV platform.
Transphorm TP65H070G4RS 650V SuperGaN® FET in TOLT
72mΩ RDS(on) in top-side-cooled, surface-mount TOLT package that meets the JEDEC-standard (MO-332).