Wolfspeed CGHV60040D & CGHV60075D5 6.0GHz GaN HEMTs
Wolfspeed CGHV60040D and CGHV60075D5 6.0GHz GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) provide superior performance compared with silicon (Si) or Gallium Arsenide (GaAs) transistors. The CGHV60040D and CGHV60075D5 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. The CGHV60040D and CGHV60075D5 are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.
The CGHV60040D and CGHV60075D5 6.0GHz GaN HEMTs are offered as bare die. The overall die size of the CGHV60040D is 820μm x 1800μm x 100μm. The overall die size of the CGHV60075D5 is 3000μm x 820μm x 100μm.
Features
- CGHV60040D
- 18dB typical small-signal gain at 4GHz
- 17dB typical small-signal gain at 6GHz
- 65% typical power-added efficiency
- 40W typical PSAT
- 50V operation
- High breakdown voltage
- Up to 6GHz operation
- 820μm x 1800μm x 100μm bare die
- CGHV60075D5
- 19dB typical small-signal gain at 4GHz
- 17dB typical small-signal gain at 6GHz
- 65% typical power-added efficiency
- 75W typical PSAT
- 50V operation
- High breakdown voltage
- Up to 6GHz operation
- 3000μm x 820μm x 100μm bare die
Applications
- 2-way private radio
- Broadband amplifiers
- Cellular infrastructure
- Test instrumentation
- Class A, AB, and linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms
CGHV60040D Mechanical Drawing
CGHV60075D5 Mechanical Drawing
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Publicado: 2015-03-18
| Atualizado: 2022-03-11