CoolGaN™ Drive HB 600V G5 Switches

Infineon Technologies CoolGaN™ Drive HB 600V G5 Switches integrate a half-bridge power stage featuring two 600V enhancement-mode CoolGaN switches with on-resistance options of 140mΩ, 270mΩ, or 500mΩ. These switches include built-in gate drivers and come in a compact 6mm × 8mm TFLGA-27 package. Designed for low-/medium-power applications, these switches are ideal for high-density motor drives and switch-mode power supplies (SMPS), leveraging the superior switching performance of CoolGaN technology. Infineon’s CoolGaN switches feature a robust gate structure that ensures minimal on-resistance when driven by a continuous gate current of just a few milliamps in the “on” state.

Resultados: 4
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Infineon Technologies FETs GaN CoolGaN Drive HB 600 V G5
Ficha técnica
2 389Em estoque
Mín.: 1
Mult.: 1
: 3 000
SMD/SMT TFLGA-27 - 40 C + 150 C CoolGaN GaN
Infineon Technologies FETs GaN 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Ficha técnica
2 646Em estoque
Mín.: 1
Mult.: 1
: 3 000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN GaN
Infineon Technologies FETs GaN 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Ficha técnica
2 667Em estoque
Mín.: 1
Mult.: 1
: 3 000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN GaN
Infineon Technologies FETs GaN 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Ficha técnica
2 345Em estoque
Mín.: 1
Mult.: 1
: 3 000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN GaN