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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


GaN the Giant Killer?
On janeiro 28, 2014 in Wide Bandgap by Barry Manz
Barry Manz
Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.
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Tagged With: GaN, MOSFETS, RF Power, Silicon, Wide Bandgap

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