CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Resultados: 30
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (EUR) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal Nome comercial
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 446Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 651Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SILICON CARBIDE MOSFET 442Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 345Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SILICON CARBIDE MOSFET 305Em estoque
240Esperado 19/03/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 5 287Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 179Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 964Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 594Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 1 144Em estoque
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 694Em estoque
1 000Esperado 12/03/2026
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 416Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 1 170Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 994Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 818Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SILICON CARBIDE MOSFET 19Em estoque
720Esperado 28/01/2027
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 49Em estoque
4 250No pedido
Mín.: 1
Mult.: 1
Bobina: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 422Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 347Em estoque
240Esperado 19/03/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SILICON CARBIDE MOSFET 194Em estoque
240Esperado 18/06/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SILICON CARBIDE MOSFET 141Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 153Em estoque
960Esperado 11/06/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 399Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 35Em estoque
960No pedido
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200 V in TO247-4 package 421Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 4.7 A 350 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC